Power characteristics of the class E amplifier on the bipolar transistor

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) Pub Date : 2000-09-11 DOI:10.1109/CRMICO.2000.1255876

J.V. Rassohina, V. Krizhanovsky

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Abstract

The results of a numerical simulation based on the bipolar transistor first-order model of the class-E amplifier with a common emitter and low power dissipation on the collector, are presented.

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双极晶体管上E类放大器的功率特性

本文给出了基于双极晶体管一阶模型的e类放大器共发射极和集电极低功耗的数值模拟结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415)

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