Keum-dong Jung, Byung-ju Kim, Byeong-Ju Kim, C. Lee, Dong-Wook Park, Byung-Gook Park, Hyungcheol Shin, J. Lee
{"title":"Considerations on the C-V Characteristics of Pentacene Metal-Insulator-Semiconductor Capacitors","authors":"Keum-dong Jung, Byung-ju Kim, Byeong-Ju Kim, C. Lee, Dong-Wook Park, Byung-Gook Park, Hyungcheol Shin, J. Lee","doi":"10.1109/SMELEC.2006.380696","DOIUrl":null,"url":null,"abstract":"C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C- V characteristics of organic MIS capacitors, these properties should be considered.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C- V characteristics of organic MIS capacitors, these properties should be considered.