A novel four-quadrant analog multiplier using SOI four-gate transistors (G/sup 4/-FETs)

K. Akarvardar, Suheng Chen, B. Blalock, S. Cristoloveanu, P. Gentil, M. Mojarradi
{"title":"A novel four-quadrant analog multiplier using SOI four-gate transistors (G/sup 4/-FETs)","authors":"K. Akarvardar, Suheng Chen, B. Blalock, S. Cristoloveanu, P. Gentil, M. Mojarradi","doi":"10.1109/ESSCIR.2005.1541669","DOIUrl":null,"url":null,"abstract":"A novel analog multiplier using SOI four-gate transistors (G/sup 4/-FETs) is presented. Thanks to the multiple inputs of the G/sup 4/-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers. Only four G/sup 4/-FETs are needed to build the multiplier core. The circuit is feasible with a standard SOI CMOS process. Two different configurations, both based on the linear modulation of the front-gate threshold voltage by the junction-gates, are presented. This paper addresses the theoretical analysis as well as the preliminary measurement results.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18

Abstract

A novel analog multiplier using SOI four-gate transistors (G/sup 4/-FETs) is presented. Thanks to the multiple inputs of the G/sup 4/-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers. Only four G/sup 4/-FETs are needed to build the multiplier core. The circuit is feasible with a standard SOI CMOS process. Two different configurations, both based on the linear modulation of the front-gate threshold voltage by the junction-gates, are presented. This paper addresses the theoretical analysis as well as the preliminary measurement results.
基于SOI四栅极晶体管(G/sup 4/- fet)的新型四象限模拟乘法器
提出了一种利用SOI四栅极晶体管(G/sup /- fet)的新型模拟倍增器。由于G/sup 4/-FET的多个输入可以独立偏置,与传统的基于单门MOSFET的乘法器相比,所提出电路中的晶体管数量显着减少。只需要4个G/sup 4/- fet来构建乘法器核心。该电路采用标准的SOI CMOS工艺是可行的。提出了两种不同的结构,都是基于结合门对前门阈值电压的线性调制。本文进行了理论分析和初步测量结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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