Variance Optimization of CMOS OpAmp Performances Using Experimental Design Approach

Arnab Khawas, S. Mukhopadhyay
{"title":"Variance Optimization of CMOS OpAmp Performances Using Experimental Design Approach","authors":"Arnab Khawas, S. Mukhopadhyay","doi":"10.1109/ISVLSI.2012.38","DOIUrl":null,"url":null,"abstract":"The effects of random variations in the fabrication process have increased significantly with the scaling of technology, causing analog circuit performance parameters to deviate from their expected values. This leads to parametric failure of I performances causing a significant loss of yield. In this work, we propose a statistical design flow, based on analytical equation based convex optimization and Response Surface Method (RSM)based experimental design technique to enhance the parametric yield of analog circuits. Stochastic MOSFET (SMOS) models are used for statistical simulation of circuits to capture the effect of process variation and mismatch in terms of performance parameter variation. The fitted quadratic response surface models for performance standard deviation are used to optimize device dimensions of a two-stage Cascode OpAmp to get a variance optimal design keeping other performance parameters as design constraints.","PeriodicalId":398850,"journal":{"name":"2012 IEEE Computer Society Annual Symposium on VLSI","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Computer Society Annual Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2012.38","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The effects of random variations in the fabrication process have increased significantly with the scaling of technology, causing analog circuit performance parameters to deviate from their expected values. This leads to parametric failure of I performances causing a significant loss of yield. In this work, we propose a statistical design flow, based on analytical equation based convex optimization and Response Surface Method (RSM)based experimental design technique to enhance the parametric yield of analog circuits. Stochastic MOSFET (SMOS) models are used for statistical simulation of circuits to capture the effect of process variation and mismatch in terms of performance parameter variation. The fitted quadratic response surface models for performance standard deviation are used to optimize device dimensions of a two-stage Cascode OpAmp to get a variance optimal design keeping other performance parameters as design constraints.
基于实验设计方法的CMOS运放性能方差优化
随着技术的规模化,制造过程中随机变化的影响显著增加,导致模拟电路性能参数偏离其期望值。这将导致I性能的参数失效,从而导致产量的显著损失。在这项工作中,我们提出了一种基于解析方程的凸优化和基于响应面法(RSM)的实验设计技术的统计设计流程,以提高模拟电路的参数良率。随机MOSFET (SMOS)模型用于电路的统计仿真,以捕获工艺变化和失配在性能参数变化方面的影响。利用性能标准差拟合的二次响应面模型对两级Cascode OpAmp的器件尺寸进行优化,得到以其他性能参数为设计约束的方差优化设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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