Frequency response of InP/InGaAs MSM photodetector with current transport along 2 deg

Abstract

The optoelectronic properties of a novel metal-semiconductor-metal (MSM) photodetector (PD) are investigated. The MSM PD uses the same layer structure and processing procedure as needed for the fabrication of high electron mobility transistors (HEMT), offering new possibilities of the realization of monolithic integrated photoreceivers. The measured 3dB bandwidth of 16 GHz at 1.3 /spl mu/m wavelength for devices with 0.5 /spl mu/m finger-spacing and -width is, to the authors' knowledge, the widest reported bandwidth on InGaAs MSM-PDs up to now.