Total dose radiation response of n-channel enhancement mode field effect transistors over wide operation temperature range

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115477

A. Bakerenkov, V. Felitsyn, V. V. Orlov, A. Rodin, G. Zebrev

引用次数: 0

Abstract

Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.

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宽工作温度范围内n沟道增强模式场效应晶体管的总剂量辐射响应

研究了n沟道2N7002晶体管在不同温度下的总剂量辐射响应。在80 ~ 350 K的宽温度范围内，测量了辐照前后器件的电压电流特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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