High frequency characteristics of MOSFETs with compact waffle layout

Wen Wu, S. Lam, P. Ko, M. Chan
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引用次数: 2

Abstract

The high frequency characteristics of waffle MOSFETs are studied. In addition to area saving, the waffle MOSFETs also provide enhancement of the RF characteristics. When compared with the conventional multi-finger layout with the same device width, the waffle MOSFETs provide extra flexibility in the design window. Measured S-parameters from a 0.35 /spl mu/m technology process, over a wide range of bias conditions, indicate that the waffle MOSFET is capable of offering enhancements in f/sub max/, f/sub T/, and minimum noise figure, with careful design.
紧凑华夫饼结构的mosfet高频特性
研究了华夫化mosfet的高频特性。除了节省面积外,华夫化mosfet还提供了射频特性的增强。与具有相同器件宽度的传统多指布局相比,华夫化mosfet在设计窗口中提供了额外的灵活性。在广泛的偏置条件下,从0.35 /spl mu/m工艺过程中测量的s参数表明,经过精心设计,华夫格MOSFET能够提供f/sub max/, f/sub T/和最小噪声系数的增强。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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