Direct feedback topology for reducing residual voltage in functional electrical stimulation

Lucas Teixeira, C. Rodrigues, C. Prior
{"title":"Direct feedback topology for reducing residual voltage in functional electrical stimulation","authors":"Lucas Teixeira, C. Rodrigues, C. Prior","doi":"10.1145/2800986.2801006","DOIUrl":null,"url":null,"abstract":"Implantable functional electric stimulation (FES) systems are currently being investigated as treatment for some types of neural dysfunctions. For this purpose, several neural stimulator systems on a chip (SOCs) have been proposed for: deep brain stimulation (DBS), cochlear prosthesis, visual prosthesis (VP), and artificial limbs control. Two major and related issues in FES are the charge balancing and Faradaic currents. When stimulation currents have DC components, or if residual voltage persists accross electrodes, the accumulated electronic charge is converted into ionic species, thus feeding irreversible Faradaic reactions that damage electrodes and necrose tissues. This article introduces circuit solutions for balancing functional electrical stimulation whilst reducing residual voltages at electrodes. The circuit consists of four blocks: an ultra-low-power charge-redistribution digital-to-analog converter (CR-DAC), a feedback mechanism, a high-voltage H-bridge and a digital controller. To prove the effectiveness of the proposed topology a circuit is being designed in CMOS UMC 130nm technology, and simulation results suggest that proposed technique allows to keep electrode voltage under safe limits, smaller than 28mV.","PeriodicalId":325572,"journal":{"name":"2015 28th Symposium on Integrated Circuits and Systems Design (SBCCI)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th Symposium on Integrated Circuits and Systems Design (SBCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2800986.2801006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Implantable functional electric stimulation (FES) systems are currently being investigated as treatment for some types of neural dysfunctions. For this purpose, several neural stimulator systems on a chip (SOCs) have been proposed for: deep brain stimulation (DBS), cochlear prosthesis, visual prosthesis (VP), and artificial limbs control. Two major and related issues in FES are the charge balancing and Faradaic currents. When stimulation currents have DC components, or if residual voltage persists accross electrodes, the accumulated electronic charge is converted into ionic species, thus feeding irreversible Faradaic reactions that damage electrodes and necrose tissues. This article introduces circuit solutions for balancing functional electrical stimulation whilst reducing residual voltages at electrodes. The circuit consists of four blocks: an ultra-low-power charge-redistribution digital-to-analog converter (CR-DAC), a feedback mechanism, a high-voltage H-bridge and a digital controller. To prove the effectiveness of the proposed topology a circuit is being designed in CMOS UMC 130nm technology, and simulation results suggest that proposed technique allows to keep electrode voltage under safe limits, smaller than 28mV.
用于降低功能性电刺激中残余电压的直接反馈拓扑结构
植入式功能性电刺激(FES)系统目前正在研究用于治疗某些类型的神经功能障碍。为此,已经提出了几种芯片上的神经刺激系统(soc),用于深部脑刺激(DBS)、人工耳蜗、视觉假体(VP)和假肢控制。FES中两个主要的相关问题是电荷平衡和法拉第电流。当刺激电流有直流成分时,或者如果残余电压在电极间持续存在,积累的电子电荷就会转化为离子,从而引发不可逆的法拉第反应,损害电极和坏死组织。本文介绍了平衡功能性电刺激同时降低电极残余电压的电路解决方案。该电路由四个模块组成:一个超低功耗电荷再分配数模转换器(CR-DAC),一个反馈机制,一个高压h桥和一个数字控制器。为了证明所提出的拓扑结构的有效性,在CMOS UMC 130nm技术上设计了一个电路,仿真结果表明,所提出的技术可以将电极电压保持在小于28mV的安全范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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