Well-tempered MOSFETs: 1D versus 2D quantum analysis

Abstract

This paper presents the two-dimensional quantum mechanical simulation of scaled "well-tempered MOSFETs" (Assad et al, IEDM Tech. Dig., p. 547, 1999, and IEEE trans. Electron Dev. vol. 47, p. 232, 2000) featuring different effective channel lengths in the deep sub-micron range. The simulation results were obtained by means of a two-dimensional Schrodinger solver that had been previously applied to idealized MOS structures. Comparison between one- and two dimensional approaches is presented, and the difference between the two models are highlighted.