Bipolar power device performance: dependence on materials, lifetime and device ratings

Abstract

The performance of bipolar devices fabricated using Si, Ge, 3C-SiC, 6H-SiC and Diamond is theoretically examined as a function of designed breakdown voltage, operating current density and carrier lifetime using analytic models. It is shown that wide bandgap materials become advantageous for high blocking voltages, where the use of Si is precluded by its large forward drop. Wide bandgap materials may be used to simultaneously achieve high off-state blocking and fast turn-off capability by using low lifetimes, with minor penalties on their forward performance.