C. Sánchez-López, E. Tlelo-Cuautle, M. A. Carrasco-Aguilar, F. E. Morales-Lopez, B. Cante-Michcol
{"title":"Multi-scroll Chaotic Oscillator Employing UGCs","authors":"C. Sánchez-López, E. Tlelo-Cuautle, M. A. Carrasco-Aguilar, F. E. Morales-Lopez, B. Cante-Michcol","doi":"10.1109/CONIELECOMP.2009.37","DOIUrl":null,"url":null,"abstract":"This paper provides a novel configuration to design a multi-scroll chaotic oscillator employing unity-gain cells. The inclusion of multi-breakpoints to create a high-order negative nonlinear resistor is realized by the parallel combinations of basic cells. The breakpoints are controlled with resistors and tuning with level shifters. The multiscroll chaotic attractor has been optimized with +/-1.5V by using standard CMOS technology of 0.35um AMS. Hspice simulations performed in the state plane and in the time domain are shown.","PeriodicalId":292855,"journal":{"name":"2009 International Conference on Electrical, Communications, and Computers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Electrical, Communications, and Computers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONIELECOMP.2009.37","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
This paper provides a novel configuration to design a multi-scroll chaotic oscillator employing unity-gain cells. The inclusion of multi-breakpoints to create a high-order negative nonlinear resistor is realized by the parallel combinations of basic cells. The breakpoints are controlled with resistors and tuning with level shifters. The multiscroll chaotic attractor has been optimized with +/-1.5V by using standard CMOS technology of 0.35um AMS. Hspice simulations performed in the state plane and in the time domain are shown.