Memory Circuits using Resonant Charge-based Devices

Abstract

A variety of charge-based logic devices are being investigated as possible technology options for the beyond-CMOS era. The tunneling devices, such as the Bilayer Pseudo Spin Field Effect transistor (BiSFET), the Bilayer Pseudo Spin Junction Transistor (BiSJT) and the Interlayer Tunnel Field Effect Transistor (ITFET), have previously been studied for their logic capabilities. These have an intrinsic memory capability, making them an interesting candidate for standalone memory applications. The performance of these devices with respect to Complementary Metal Oxide Semiconductor (CMOS) for memory applications is presented.