A printable form of single crystal silicon for high performance thin film transistors on plastic

E. Menard, D. Khang, K. Lee, R. Nuzzo, J. Rogers
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Abstract

This talk describes the fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon. These elements are fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon, and then lifting off the silicon. A large collection of such objects - which can have geometries that range from ribbons to platelets, sheets, disks and other shapes - constitutes a type of material, which we refer to as microstructured silicon (ps-Si), that can be deposited and patterned, by dry transfer printing or solution casting, onto plastic substrates to yield mechanically flexible thin film transistors that have excellent electrical properties.
一种可印刷的单晶硅,用于塑料上的高性能薄膜晶体管
本讲座介绍了高性能薄膜晶体管的制造和电学特性,这些晶体管来源于单晶硅的印刷和溶液铸造微/纳米物体。这些元件是由传统的块状硅衬底或绝缘体上的硅晶圆制成的,通过软光刻法绘制一层抗蚀剂,各向异性湿蚀刻暴露的硅,然后从硅上取下。大量这样的物体——其几何形状可以从带状到片状、片状、圆盘和其他形状——构成了一种材料,我们称之为微结构硅(ps-Si),它可以通过干转移印刷或溶液铸造的方式沉积和图案化到塑料基板上,从而产生具有优异电性能的机械柔性薄膜晶体管。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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