CNTFET-based RF electronics — State-of-the-art and future prospects

Abstract

Carbon nanotube (CNT) field effect transistors (FETs) are expected to have several advantages over silicon-based FETs. While most of the literature deals with digital applications, this paper gives an overview on the present status of CNTFET technology for radio-frequency analog applications, including the respective requirements. Results for transistors and circuits achieved so far as well as possible fabrication approaches for performance improvement are discussed.