Verification of wafer-level calibration accuracy at cryogenic temperatures

A. Rumiantsev, R. Doerner, P. Sakalas
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引用次数: 6

Abstract

This article presents the results of accuracy verification of wafer level calibration at cryogenic temperatures based on coplanar calibration standards. For the first time, the electrical characteristics of commercially available coplanar calibration lines were extracted at the temperature of liquid helium. It was demonstrated that the temperature dependent variation of the characteristic impedance of the tested lines is within ±1% tolerance of the nominal value of 50 Ω for a temperature range from room temperature down to 4 K Finally, the accuracy of the LRM+ calibration method at cryogenic temperatures was verified by definition of the worst case error bounds for the measurement of passive devices and compared to the reference NIST multiline TRL.
在低温下验证晶圆级校准精度
本文介绍了基于共面校准标准的低温晶圆级校准的精度验证结果。首次在液氦温度下提取了市售共面校准线的电特性。结果表明,在室温至4 K的温度范围内,被测线路特性阻抗的温度相关变化在标称值50 Ω的±1%公差范围内。最后,通过定义无源器件测量的最坏情况误差界限,并与参考NIST多线TRL进行比较,验证了LRM+校准方法在低温下的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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