DC and AC performance analysis of 25 nm symmetric/asymmetric double-gate, back-gate and bulk CMOS

Abstract

In this paper, the performance of 25 nm double-gate, back-gate and super-halo CMOS devices has been analyzed, including the self-consistent 2D quantization effect. The drive current is enhanced by the gate-to-body coupling effect for double-gate with ultra-thin body. The channel quantization effect can substantially degrade the drive current for asymmetric double-gate, back-gate, and bulk CMOS ICs. It is demonstrated that the exceptional SCE immunity in SDG offers substantial performance leverage over conventional MOSFET structures.