T. Hiramoto, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa
{"title":"Switching of 3300V Scaled IGBT by 5V Gate Drive","authors":"T. Hiramoto, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa","doi":"10.1109/asicon47005.2019.8983633","DOIUrl":null,"url":null,"abstract":"In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of $E_{\\mathrm{off}}$ vs $V_{\\mathrm{cesat}}$ relationship by 35% was achieved.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/asicon47005.2019.8983633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, the switching of 3300V IGBTs by 5V gate drive voltage has been successfully demonstrated for the first time. IGBT was designed based on a scaling principle. Comparing with conventional 15V-driven non-scaled IGBTs, the tum-off tail current of the scaled devices significantly decreased. The improvement of $E_{\mathrm{off}}$ vs $V_{\mathrm{cesat}}$ relationship by 35% was achieved.
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