{"title":"A high FoM lithium niobate resonant transformer for passive voltage amplification","authors":"T. Manzaneque, Ruochen Lu, Yansong Yang, S. Gong","doi":"10.1109/TRANSDUCERS.2017.7994169","DOIUrl":null,"url":null,"abstract":"This paper reports a lithium niobate (LiNbO3) resonant transformer with an extracted passive open-circuit voltage gain of 38. The result has been attained thanks to a high figure of merit (FoM=kt2 · Q) of 136 that results from a high electromechanical coupling (kt2) of 28% and a high Q of 480. To our knowledge, this is the highest FoM that has been demonstrated for a two-port MEMS resonator. The fabricated transformer also features a factional bandwidth of 0.21%, thus providing a large operation temperature range (±18 K) over which a high gain can be maintained. This work has shown promising results for wake-up radio applications, where transformers can be exploited for detection of faint signals with very low or zero power consumption.","PeriodicalId":174774,"journal":{"name":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2017.7994169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
This paper reports a lithium niobate (LiNbO3) resonant transformer with an extracted passive open-circuit voltage gain of 38. The result has been attained thanks to a high figure of merit (FoM=kt2 · Q) of 136 that results from a high electromechanical coupling (kt2) of 28% and a high Q of 480. To our knowledge, this is the highest FoM that has been demonstrated for a two-port MEMS resonator. The fabricated transformer also features a factional bandwidth of 0.21%, thus providing a large operation temperature range (±18 K) over which a high gain can be maintained. This work has shown promising results for wake-up radio applications, where transformers can be exploited for detection of faint signals with very low or zero power consumption.