A 12-bit mismatch-shaped pipeline A/D converter

A. Shabra, Hae-Seung Lee
{"title":"A 12-bit mismatch-shaped pipeline A/D converter","authors":"A. Shabra, Hae-Seung Lee","doi":"10.1109/VLSIC.2001.934242","DOIUrl":null,"url":null,"abstract":"This paper presents pipeline A/D converters with improved linearity. The linearity improvement is achieved through a combination of oversampling and mismatch shaping, which modulates the distortion energy out-of-band. A 77 dB SFDR is achieved at an oversampling ratio of 4 and a sampling rate of 51 Msample/s, which is a 12 dB improvement compared to a converter with no mismatch shaping. These results were obtained from a test chip fabricated in a 0.35 /spl mu/m CMOS process.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2001.934242","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents pipeline A/D converters with improved linearity. The linearity improvement is achieved through a combination of oversampling and mismatch shaping, which modulates the distortion energy out-of-band. A 77 dB SFDR is achieved at an oversampling ratio of 4 and a sampling rate of 51 Msample/s, which is a 12 dB improvement compared to a converter with no mismatch shaping. These results were obtained from a test chip fabricated in a 0.35 /spl mu/m CMOS process.
一个12位不匹配形状的管道A/D转换器
本文介绍了一种线性度提高的流水线A/D转换器。线性度的改善是通过过采样和失配整形的组合来实现的,它可以调制带外的失真能量。在过采样比为4,采样率为51 Msample/s的情况下,实现了77 dB的SFDR,与没有错配整形的转换器相比,这是一个12 dB的改进。这些结果是在0.35 /spl mu/m CMOS工艺制造的测试芯片上获得的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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