Write-error-rate of Spin-Transfer-Torque MRAM (Invited)

Abstract

Embedded Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) is now a standard foundry offering for embedded non-volatile memory applications at the 28 nm node and below, where it replaces embedded Flash, due to lower development costs. The switch from in-plane to perpendicularly magnetized magnetic materials enabled reliable operation and a scaling path. Write-error-rate is the key reliability challenge for STT-MRAM. While due to fundamental physics, write-error-rate of STT-MRAM can be engineered to meet even aggressive product specifications.