Study of aging time effect on the EMI evolution of power RF LDMOS transistor in DC-DC buck converter circuit

2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2021-09-23 DOI:10.1109/THERMINIC52472.2021.9626500

M. Tlig, M. A. Belaïd

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Abstract

Recent studies have shown that the aging time effect on power RF LDMOS transistor may modify electromagnetic emission significantly. It is even rarer to use of RF LDMOS (Radio Frequency Lateral Diffused Metal–Oxide–Semiconductor) devices in a power application. This paper reports on an experiment that prove to elucidate the origins of level changes in the Electro-Magnetic Interference (EMI) in DCDC buck converter. In addition, their influences on the electrical parameters and their relationship with charge trapping at the interface are studied. The experimental results (spectre and waveform parameters), obtained after various thermal aging times are presented and discussed. The experimental results have highlighted that there is an increase in the amplitude of resonances on the interference spectra after aging. The level changes are proportional to the aging time. The charge trapping in gate oxide caused Miller capacity value to decrease (Crss), thereafter in turn a decrease in the level of disturbance.

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老化时间对DC-DC降压变换器中功率RF LDMOS晶体管电磁干扰演化的影响研究

近年来的研究表明，老化时间对功率射频LDMOS晶体管的电磁发射有显著的影响。在电源应用中使用RF LDMOS(射频横向扩散金属氧化物半导体)器件更是罕见。本文报道了一项实验，证明了DCDC降压变换器中电磁干扰电平变化的来源。此外，还研究了它们对电参数的影响及其与界面电荷俘获的关系。给出并讨论了不同热老化时间后的实验结果(光谱和波形参数)。实验结果表明，老化后干涉谱上的共振幅值有所增加。电平变化与老化时间成正比。栅极氧化物中的电荷捕获导致米勒容量值降低(cross)，随后扰动水平降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

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