Nanocrystalline SiGe films: structure and properties

Proceedings of Semiconducting and Semi-Insulating Materials Conference Pub Date : 1996-12-31 DOI:10.1109/SIM.1996.570940

F. Edelman, Y. Komem, M. Stolzer, P. Werner, R. Butz

引用次数: 2

Abstract

Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).

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纳米晶SiGe薄膜:结构与性能

在室温下，在SiO{sub 2}/Si(001)衬底上制备了厚度为200—300 nm、x = 0.27—0.55、Ga(1%)高掺杂的非晶(a) Si{sub 1{-}x}Ge{sub x}薄膜。为了在600 ~ 900℃下结晶，将a-Si{sub 1{-}x}Ge{sub x}/SiO{sub 2}/Si样品在10{sup {-}6} Torr真空中退火。x射线衍射和原位透射电镜观察表明，Si{sub 1{-}x}Ge{sub x}薄膜具有纳米晶结构，晶粒尺寸约为5—20 nm，比未掺杂薄膜小100倍。纳米晶Si{sub 1{-}x}Ge{sub x}薄膜具有较高的空穴迁移率(1 ~ 100 cm{sup 2}/Vs)和塞贝克系数(5 ~ 110 {micro}V/K)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Semiconducting and Semi-Insulating Materials Conference

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