Combined Analysis of Supply Voltage and Body-Bias Voltage for Energy Management

Rida Kheirallah, J. Gallière, N. Azémard, G. Ducharme
{"title":"Combined Analysis of Supply Voltage and Body-Bias Voltage for Energy Management","authors":"Rida Kheirallah, J. Gallière, N. Azémard, G. Ducharme","doi":"10.1109/PATMOS.2018.8464159","DOIUrl":null,"url":null,"abstract":"For advanced technology nodes, static consumption of integrated circuits has become a key factor for the microelectronics industry. Circuit energy efficiency is measured in terms of delay performance and consumption. With the increase of physical and environmental parameters, the Fully-Depleted Silicon-on-Insulator technology allows to extend Moore's law in the nanometer domain. In this work, a statistical study of CMOS-FDSOI integrated circuit energy is carried out. Statistical libraries characterizing delay and power of CMOS-FDSOI transistors are presented. Given the advantages of the FDSOI technology, statistical approaches based on the libraries are applied in order to estimate delay and power. Combined analysis of supply voltage and body-bias voltage allows to determine an efficient Delay-Power compromise and to manage circuit energy with a significant gain in CPU time.","PeriodicalId":234100,"journal":{"name":"2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 28th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PATMOS.2018.8464159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

For advanced technology nodes, static consumption of integrated circuits has become a key factor for the microelectronics industry. Circuit energy efficiency is measured in terms of delay performance and consumption. With the increase of physical and environmental parameters, the Fully-Depleted Silicon-on-Insulator technology allows to extend Moore's law in the nanometer domain. In this work, a statistical study of CMOS-FDSOI integrated circuit energy is carried out. Statistical libraries characterizing delay and power of CMOS-FDSOI transistors are presented. Given the advantages of the FDSOI technology, statistical approaches based on the libraries are applied in order to estimate delay and power. Combined analysis of supply voltage and body-bias voltage allows to determine an efficient Delay-Power compromise and to manage circuit energy with a significant gain in CPU time.
用于能量管理的电源电压和体偏压联合分析
对于先进的技术节点,集成电路的静态消耗已经成为微电子工业的关键因素。电路能量效率是根据延迟性能和消耗来衡量的。随着物理和环境参数的增加,完全耗尽绝缘体上硅技术允许摩尔定律在纳米领域的扩展。本文对CMOS-FDSOI集成电路的能量进行了统计研究。给出了表征CMOS-FDSOI晶体管延迟和功率的统计库。考虑到FDSOI技术的优点,应用基于库的统计方法来估计延迟和功率。电源电压和体偏置电压的综合分析可以确定有效的延迟功率折衷方案,并在CPU时间显著增加的情况下管理电路能量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信