Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM

Abstract

The trade-off correlation between peripheral PMOS NBTI and Array transistors GIDL current received little attention, previously. We show experimental evidence that Hydrogen anneal will speed up the PMOS NBTI degradation, and reduce the Array transistors GIDL current, at the same time. In order to improve the PMOS NBTI immunity without damaging Array transistors electrical characters, we propose the increasing PG Fluorine implant, and discuss the NBTI improvement mechanism.