Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628050

Y. Hou, B. Chen, B. Gao, Z. Lun, Z. Xin, R. Liu, L. Liu, D. Han, Y. Wang, X. Liu, J. Kang

引用次数: 8

Abstract

TiN/HfOx/Al/Pt resistive switching random access memory (RRAM) devices were fabricated and investigated. The HfOx based RRAM with Al inserted layer showed bipolar resistive switching phenomenon. As a result of the improvement of uniformity contributed by Al atoms' diffusion into HfOx film, robust self-compliance multilevel operation during set and reset process was reported. The possible mechanism was also discussed.

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TiN/HfOx/Al/Pt RRAM器件的自适应多电平电阻开关特性

制作并研究了TiN/HfOx/Al/Pt电阻开关随机存取存储器(RRAM)器件。基于HfOx的Al插入层RRAM表现出双极电阻开关现象。由于Al原子扩散到HfOx薄膜中，提高了均匀性，在设置和复位过程中实现了鲁棒的自顺应多级运行。并对可能的机理进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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