Power amplifier performances and miniaturization improvement based on Wire Bondable vertical Silicon Capacitors

Abstract

This paper presents Wire Bondable vertical Silicon Capacitors (WBSC) performances in high-frequency high-power applications up to 10 GHz and results on capacitance value versus die size. These capacitors combine ultra-deep trench MOS capacitors of few nF and single layer MOS capacitors of few pF in a 0101 single package. The performances of these capacitors have been compared with conventional commercialized vertical capacitors. The benefits of using these capacitors have been quantified thanks to their integration in a power amplifier.