Reliability hazard characterization of wafer-level spatial metrology parameters based on LOF-KNN method

Abstract

This paper presents a new method for characterizing device reliability hazard by using wafer-level spatial analysis. The method is based on the combination of the LOF algorithm and KNN algorithm, which can effectively identify and quantify the reliability of the device and detect local outliers. Outlier devices often have serious reliability hazard. This approach takes into account variations in device measurement data due to process variations on the wafer, increasing device reliability and saving cost. The method is verified using the electrical parameter measurements of devices. The results are compared with traditional method.