{"title":"A 1V 10-bit 500KS/s energy-efficient SAR ADC using Master-Slave DAC technique in 180nm CMOS","authors":"Y. Yu, Fujun Huang, Chorng-Kuang Wang","doi":"10.1109/VLSI-DAT.2014.6834904","DOIUrl":null,"url":null,"abstract":"This work verifies the technique - Master-Slave digital to analog converter (M-S DAC) - for reducing the significant energy dissipation of 93% in comparison with the conventional capacitor array in successive approximation register analog to digital converter (SAR ADC). This technique avoiding the redundant charge and discharge in larger capacitors is demonstrated by a fabricated chip in 180nm CMOS standard process, and reaches performance including signal-to-noise-and-distortion ratio of 59.2dB in equivalent 9.6-bit, power consumption of 28 μW at the sampling frequency of 500KS/s with the conditions of supplying voltage of 1V in core area of 0.15mm2.","PeriodicalId":267124,"journal":{"name":"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Papers of 2014 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-DAT.2014.6834904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work verifies the technique - Master-Slave digital to analog converter (M-S DAC) - for reducing the significant energy dissipation of 93% in comparison with the conventional capacitor array in successive approximation register analog to digital converter (SAR ADC). This technique avoiding the redundant charge and discharge in larger capacitors is demonstrated by a fabricated chip in 180nm CMOS standard process, and reaches performance including signal-to-noise-and-distortion ratio of 59.2dB in equivalent 9.6-bit, power consumption of 28 μW at the sampling frequency of 500KS/s with the conditions of supplying voltage of 1V in core area of 0.15mm2.