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An XPS Study on Hg-Doping Effect on Electronic Structure ofBaPb0.75Bi0.25O3 Superconductor

The Open Superconductors Journal Pub Date : 2009-02-27 DOI:10.2174/1876537800901010001
Y. Zhang, C. H. Cheng, Y. L. Chen, Y. Cui, H. Lin, Y. Zhao
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引用次数: 2

Abstract

The electronic structure of BaPb0.75-xHgxBi0.25O3 (BPHBO) system is studied with x-ray photoemission spec- troscopy (XPS). It is found that the core levels of Pb4f and O1s states shift towards low energy with the mercury doping induced, and at the meantime, the core level of Bi4f state shifts towards high energy. The results and analyses reveal that the mercury doping induces a systematic change of the electronic structure of the system, which consequently affects the superconductivity. Accordingly, the suppression of superconductivity at low doping level (x<0.2) is attributed to sup- pressed charge-disproportionate state whereas the recovery of the superconductivity in the doping level region 0.3
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hg掺杂对bapb0.75 bi0.25 o3超导体电子结构影响的XPS研究
用x射线光发射光谱(XPS)研究了BaPb0.75-xHgxBi0.25O3 (BPHBO)体系的电子结构。结果表明，在汞掺杂的诱导下，Pb4f和O1s的核心能级向低能方向移动，而Bi4f的核心能级向高能方向移动。结果和分析表明，汞的掺杂引起了体系电子结构的系统性变化，从而影响了体系的超导性。因此，在低掺杂水平(x<0.2)处超导性的抑制归因于压下的电荷不对称状态，而在掺杂水平区域0.3
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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The Open Superconductors Journal
The Open Superconductors Journal
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