H. Madan, D. Veksler, Y.T. Chen, J. Huang, N. Goel, G. Bersuker, S. Datta
{"title":"Interface states at high- к /InGaAs interface: H2O vs. O3 based ALD dielectric","authors":"H. Madan, D. Veksler, Y.T. Chen, J. Huang, N. Goel, G. Bersuker, S. Datta","doi":"10.1109/DRC.2011.5994443","DOIUrl":null,"url":null,"abstract":"By combining the capacitance and conductance analysis techniques, we obtained the D<inf>it</inf> distribution throughout the band gap of In<inf>0.53</inf>Ga<inf>0.47</inf>As capacitors with H<inf>2</inf>O-based and O<inf>3</inf>-based ALD oxides. The choice of appropriate temperature to obtain the quasi-static C-V and the DC voltage sweep rate is an essential for the correct extraction of D<inf>it</inf>. Simultaneously we obtained the trap kinetics characteristics. We claim that: (i) the H<inf>2</inf>O-based ALD deposition results in a fewer traps in the lower portion of In<inf>0.53</inf>Ga<inf>0.47</inf>As band gap, (ii) is related to the formation of the thicker native oxide in the O<inf>3</inf>-based samples; (iii) the mid gap traps in the H<inf>2</inf>O-based samples are significantly slower than those in the O<inf>3</inf>-based samples, which indicate their different nature.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
By combining the capacitance and conductance analysis techniques, we obtained the Dit distribution throughout the band gap of In0.53Ga0.47As capacitors with H2O-based and O3-based ALD oxides. The choice of appropriate temperature to obtain the quasi-static C-V and the DC voltage sweep rate is an essential for the correct extraction of Dit. Simultaneously we obtained the trap kinetics characteristics. We claim that: (i) the H2O-based ALD deposition results in a fewer traps in the lower portion of In0.53Ga0.47As band gap, (ii) is related to the formation of the thicker native oxide in the O3-based samples; (iii) the mid gap traps in the H2O-based samples are significantly slower than those in the O3-based samples, which indicate their different nature.