A Novel on-chip ultra-low power temperature sensing scheme

S. Chouhan, K. Halonen
{"title":"A Novel on-chip ultra-low power temperature sensing scheme","authors":"S. Chouhan, K. Halonen","doi":"10.1109/NORCHP.2012.6403108","DOIUrl":null,"url":null,"abstract":"In this work, a CMOS based temperature sensor with Nano-watt power consumption is presented. The proposed scheme utilizes sensitivity of MOS towards temperature in subthreshold region. Sensor is composed of PMOS and NMOS group which subsequently generates voltages that are having positive and negative temperature coefficients respectively. It has been observed that on subtracting these voltages, resultant shows, highly linear dependence with temperature. The proposed scheme is implemented using AMS 0.35 μm standard CMOS technology, and it shows wide temperature sensing ranges from -40 °C to +140 °C with a power consumption of tens of Nano watts.","PeriodicalId":332731,"journal":{"name":"NORCHIP 2012","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NORCHIP 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2012.6403108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

In this work, a CMOS based temperature sensor with Nano-watt power consumption is presented. The proposed scheme utilizes sensitivity of MOS towards temperature in subthreshold region. Sensor is composed of PMOS and NMOS group which subsequently generates voltages that are having positive and negative temperature coefficients respectively. It has been observed that on subtracting these voltages, resultant shows, highly linear dependence with temperature. The proposed scheme is implemented using AMS 0.35 μm standard CMOS technology, and it shows wide temperature sensing ranges from -40 °C to +140 °C with a power consumption of tens of Nano watts.
一种新颖的片上超低功耗温度传感方案
本文提出了一种纳米级功耗的CMOS温度传感器。该方案利用了MOS对亚阈值区域温度的敏感性。传感器由PMOS和NMOS组组成,它们随后分别产生具有正和负温度系数的电压。已经观察到,当减去这些电压时,结果显示与温度高度线性相关。该方案采用AMS 0.35 μm标准CMOS技术实现,具有-40°C至+140°C的宽温度传感范围,功耗为数十纳瓦。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信