DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric

Abstract

High performance deep sub-micron T-gate AlGaN/GaN MOSHEMTs are demonstrated using lattice matched ALE MgCaO as gate dielectric. The 120 nm-Lg MOSHEMT has an I_DMAX of 1.2 A/mm, R_on of 1.5 Ω·mm, a f_t/f_max of 101/150 GHz, with negligible hysteresis and I_G, showing the promise as a GaN MOS technology. The work at Purdue University is supported by AFOSR and the work at Harvard University is supported by ONR.