A 130nm hybrid low dropout regulator based on switched mode control for digital load circuits

ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference Pub Date : 2016-09-01 DOI:10.1109/ESSCIRC.2016.7598306

Saad Bin Nasir, Shreyas Sen, A. Raychowdhury

引用次数: 23

Abstract

A hybrid (digital and analog) low dropout regulator (LDO) utilizing switched mode control is designed in 130 nm CMOS for fine grain power management, fast droop recovery and robust small signal regulation of multi-VCC digital loads. The design provides an optimal trade-off of performance and accuracy by switching between a digital and an analog control loop. The hybrid topology achieves robust small signal regulation and fast recovery from large signal transients or power state transitions. Measurements from a 130nm test-chip show Near-Threshold Voltage (NTV) operation, fast transient response of 18 ns for a load step of 10.3mA and a peak current efficiency of 98.64%.

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一种基于数字负载电路开关模式控制的130nm混合低差稳压器

设计了一种基于开关模式控制的混合(数字和模拟)低差调节器(LDO)，用于多vcc数字负载的细粒度电源管理，快速下垂恢复和鲁棒小信号调节。该设计通过在数字和模拟控制回路之间切换，提供了性能和精度的最佳权衡。混合拓扑实现了鲁棒的小信号调节和从大信号瞬态或功率状态转换中快速恢复。在130nm测试芯片上的测试结果表明，该芯片工作在近阈值电压(NTV)下，负载步长为10.3mA时的瞬态响应速度为18 ns，峰值电流效率为98.64%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference

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