Performance Improvement of OTFTs using Double Layer Insulator

Abstract

Organic thin-film transistors (OTFTs) with improved performance are fabricated using SiO2-cross-linked PVA double layer insulator. The improved field- effect mobility, on-current, off-current, on/off ratio, and subthreshold slope are 0.12 cm2/V-sec, 9.2times10-6 Aring, 2times10-12 Aring, 4.6times106, and 0.4 V/dec, respectively. In addition, a negligible threshold voltage shift is observed in the device. The performance improvements are attributed to good leakage characteristic of SiO2 and high-k characteristic of cross- linked PVA. Based on the proposed OTFTs, an organic inverter working as high as 1 kHz is implemented.