Simple realization of a monolithic integrated photoreceiver for 10 Gbit/s using an InP/InGaAs heterostructure

Abstract

A novel monolithic integrated photoreceiver for 10 Gbit/s long-wavelength optoelectronic transmission systems is presented. The photoreceiver consists of an MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. Design considerations, preparation procedure and optoelectronic properties of the photoreceiver under 1.3 /spl mu/m wavelength illumination are presented. The MSM photodetectors exhibit a 3 dB bandwidth of 16 GHz and the HEMT amplifiers have the cut-off frequency f/sub T/ of 45 GHz and f/sub max/, of 85 GHz. A bandwidth of 16 GHz can be achieved on optimized integrated photoreceivers.