{"title":"Ultra low power 128 byte memory design based on D-Latch in 0.18 µm process","authors":"Saurabh Tripathi, Nupur Jain, B. Mishra","doi":"10.1109/PRIMEASIA.2015.7450476","DOIUrl":null,"url":null,"abstract":"This work mainly presents a novel 128 byte full custom memory array based on D-Latch. A robust full custom read write memory architecture is proposed that is best suited to operate in the sub-threshold region. Starting with different latch architectures minimum operating supply voltage comparison, the complete byte addressable memory design has been discussed. We further analyse the performance results under an application and its different parameters. All the design parameters and the simulation results are presented for 0.18 μm process.","PeriodicalId":137621,"journal":{"name":"2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRIMEASIA.2015.7450476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work mainly presents a novel 128 byte full custom memory array based on D-Latch. A robust full custom read write memory architecture is proposed that is best suited to operate in the sub-threshold region. Starting with different latch architectures minimum operating supply voltage comparison, the complete byte addressable memory design has been discussed. We further analyse the performance results under an application and its different parameters. All the design parameters and the simulation results are presented for 0.18 μm process.