Tunnel oxide thickness dependence of activation energy for SiGe quantum dot flash memory

Abstract

For nonvolatile memory devices, a long retention time is very important. Nanocrystal floating gate has been demonstrated to lead to an improvement for retention time compare to conventional continuous floating gate. In this paper, the authors present our studies of activation energy for SiGe nanocrystal flash memory devices as a function of tunnel oxide thickness to try to clarify this issue