MEDICI simulation of 6H-SiC oxide ramp profile (ORP) Schottky structure

Abstract

A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 /spl mu/m oxide.