A 2.8-V Multibit Complex Bandpass ΔΣAD Modulator in 0.18μm CMOS

H. San, Y. Jingu, H. Wada, H. Hagiwara, A. Hayakawa, H. Kobayashi, M. Hotta
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Abstract

A second-order multibit switched-capacitor (SC) complex bandpass ΔΣ AD modulator has been designed, fabricated and tested for application to low-IF receivers in wireless communication systems. We have employed two new algorithms there to improve the signal-to-noise-and-distortion (SNDR) of the modulator, (i) A complex bandpass filter with I, Q dynamic matching to reduce the mismatch influence between I, Q paths. As its by-product, the complex modulator can be divided into two separate parts without signal line crossing between the upper and lower paths. Therefore, the layout design of the modulator can be greatly simplified; (ii) A new complex bandpass data-weighted averaging (DWA) algorithm is implemented to suppress nonlinearity effects of multibit DACs in complex form to achieve high accuracy. Implemented in a 0.18-μm CMOS process and at 2.8V supply, the modulator achieves a measured peak SNDR of 64.5dB at 20MS/s with a signal bandwidth of 78kHz while dissipating 28.4mW and occupying an area of 1.82mm2.
基于0.18μm CMOS的2.8 v多位复杂带通ΔΣAD调制器
设计、制作并测试了一种二阶多比特开关电容(SC)复合带通ΔΣ AD调制器,用于无线通信系统中的低中频接收机。我们在那里采用了两种新算法来改善调制器的信噪比和失真(SNDR), (i)具有i, Q动态匹配的复杂带通滤波器,以减少i, Q路径之间的不匹配影响。作为其副产品,复合调制器可以分为两个独立的部分,上下路径之间没有信号线交叉。因此,调制器的布局设计可以大大简化;(ii)实现了一种新的复杂带通数据加权平均(DWA)算法,以抑制复杂形式的多位dac的非线性效应,达到较高的精度。该调制器采用0.18 μm CMOS工艺,在2.8V电源下,在20MS/s下的峰值SNDR为64.5dB,信号带宽为78kHz,功耗为28.4mW,占用面积为1.82mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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