A realistic fault model for flash memories

Yea-Ling Horng, Jing-Reng Huang, Tsin-Yuan Chang
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引用次数: 12

Abstract

To explore all faulty behavior on NAND-type flash memory is impractical, and the defects in the SPICE model level are considered. In this paper, two SPICE models of the flash cell are developed and used for circuit-level faulty behavior simulation. The faulty behaviors can be classified to six types and applied for the fault modeling or testing of NAND-type flash memory.
一个现实的闪存故障模型
探究nand型闪存的所有故障行为是不切实际的,并且考虑了SPICE模型级别的缺陷。本文建立了flash电池的两个SPICE模型,并将其用于电路级故障行为仿真。故障行为可分为六种类型,并可用于nand型闪存的故障建模或测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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