{"title":"Ultra low power subthreshold MOS current mode logic circuits using a novel load device concept","authors":"A. Tajalli, E. Vittoz, Y. Leblebici, E. J. Brauer","doi":"10.1109/ESSCIRC.2007.4430304","DOIUrl":null,"url":null,"abstract":"This article presents a novel and robust approach for implementing ultra-low power MOS current mode logic (MCML) circuits. To operate at very low bias currents, a simple and compact high resistance load device has been introduced. Operating in subthreshold regime, the circuit can be used in a very wide frequency range by adjusting the bias current without any need for resizing the devices. Measurements in 0.18 mum CMOS technology show that the proposed MCML circuit can be operated reliably with bias currents as low as 1 nA offering a significant improvement of the power-delay product compared to conventional CMOS gates. Simulations show that the proposed circuit exhibits faster response compared to the conventional MCML circuits with triode-mode PMOS load devices at low bias currents.","PeriodicalId":121828,"journal":{"name":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"45","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2007.4430304","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 45
Abstract
This article presents a novel and robust approach for implementing ultra-low power MOS current mode logic (MCML) circuits. To operate at very low bias currents, a simple and compact high resistance load device has been introduced. Operating in subthreshold regime, the circuit can be used in a very wide frequency range by adjusting the bias current without any need for resizing the devices. Measurements in 0.18 mum CMOS technology show that the proposed MCML circuit can be operated reliably with bias currents as low as 1 nA offering a significant improvement of the power-delay product compared to conventional CMOS gates. Simulations show that the proposed circuit exhibits faster response compared to the conventional MCML circuits with triode-mode PMOS load devices at low bias currents.
本文提出了一种实现超低功耗MOS电流模逻辑(MCML)电路的新颖而稳健的方法。为了在非常低的偏置电流下工作,介绍了一种简单紧凑的高阻负载装置。在亚阈值状态下工作,通过调整偏置电流,电路可以在很宽的频率范围内使用,而不需要调整器件的尺寸。在0.18 ma CMOS技术中的测量表明,所提出的MCML电路可以在低至1 nA的偏置电流下可靠地工作,与传统CMOS栅极相比,功率延迟产品显着改善。仿真结果表明,在低偏置电流下,与传统的带有三极管PMOS负载器件的MCML电路相比,该电路具有更快的响应速度。