Hao Gao, S. Mahani, David Seebacher, M. Bassi, G. Hueber
{"title":"A 24-30 GHz Broadband Doherty PA with a maximum 15.37 dBm Pavg and 14.6% PAEavg in 0.13 μm SiGe for 400 MHz BW 5G NR","authors":"Hao Gao, S. Mahani, David Seebacher, M. Bassi, G. Hueber","doi":"10.1109/ESSCIRC55480.2022.9911231","DOIUrl":null,"url":null,"abstract":"This paper presents a 24–30 GHz broadband Doherty P A (DP A) in Infineon $0.13 \\mu \\mathrm{m}$ SiGe BiCMOS technology. A broadband transformer-based impedance inverter matching network (IIMN) is proposed and implemented to achieve simultaneous wide bandwidth and high efficiency within a compact size. Furthermore, a stacked PA unit cell topology is applied for power added efficiency (PAE) enhancement. In the 5G NR FR2 64-QAM modulated measurement from 24–30 GHz (5G N257 N258 bands) with 5% EVM constrain, this DPA achieves a maximum 17.24 dBm Pavg and 16.8% PAE with 100MHz BW. With 200 MHz BW, the maximum Pavg is 16.94 dBm, and $\\text{PAE}_{\\mathrm{a}\\mathrm{v}\\mathrm{g}}$ is 16.6%. With 400 MHz, the maximum Pavg is 15.37 dBm, and $\\text{PAE}_{\\mathrm{a}\\mathrm{v}\\mathrm{g}}$ is 14.6%. In 24–30 GHz (N257 N258), this PA could deliver above 12 dBm average output power (P avg), and its average PAE $(\\text{PAE}_{\\mathrm{a}\\mathrm{v}\\mathrm{g}})$ keeps higher than 10% in whole bands, all reported at critical $8 5^{\\circ}\\mathrm{C}$ condition.","PeriodicalId":168466,"journal":{"name":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC55480.2022.9911231","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a 24–30 GHz broadband Doherty P A (DP A) in Infineon $0.13 \mu \mathrm{m}$ SiGe BiCMOS technology. A broadband transformer-based impedance inverter matching network (IIMN) is proposed and implemented to achieve simultaneous wide bandwidth and high efficiency within a compact size. Furthermore, a stacked PA unit cell topology is applied for power added efficiency (PAE) enhancement. In the 5G NR FR2 64-QAM modulated measurement from 24–30 GHz (5G N257 N258 bands) with 5% EVM constrain, this DPA achieves a maximum 17.24 dBm Pavg and 16.8% PAE with 100MHz BW. With 200 MHz BW, the maximum Pavg is 16.94 dBm, and $\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}}$ is 16.6%. With 400 MHz, the maximum Pavg is 15.37 dBm, and $\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}}$ is 14.6%. In 24–30 GHz (N257 N258), this PA could deliver above 12 dBm average output power (P avg), and its average PAE $(\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}})$ keeps higher than 10% in whole bands, all reported at critical $8 5^{\circ}\mathrm{C}$ condition.