A 24-30 GHz Broadband Doherty PA with a maximum 15.37 dBm Pavg and 14.6% PAEavg in 0.13 μm SiGe for 400 MHz BW 5G NR

Hao Gao, S. Mahani, David Seebacher, M. Bassi, G. Hueber
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Abstract

This paper presents a 24–30 GHz broadband Doherty P A (DP A) in Infineon $0.13 \mu \mathrm{m}$ SiGe BiCMOS technology. A broadband transformer-based impedance inverter matching network (IIMN) is proposed and implemented to achieve simultaneous wide bandwidth and high efficiency within a compact size. Furthermore, a stacked PA unit cell topology is applied for power added efficiency (PAE) enhancement. In the 5G NR FR2 64-QAM modulated measurement from 24–30 GHz (5G N257 N258 bands) with 5% EVM constrain, this DPA achieves a maximum 17.24 dBm Pavg and 16.8% PAE with 100MHz BW. With 200 MHz BW, the maximum Pavg is 16.94 dBm, and $\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}}$ is 16.6%. With 400 MHz, the maximum Pavg is 15.37 dBm, and $\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}}$ is 14.6%. In 24–30 GHz (N257 N258), this PA could deliver above 12 dBm average output power (P avg), and its average PAE $(\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}})$ keeps higher than 10% in whole bands, all reported at critical $8 5^{\circ}\mathrm{C}$ condition.
一种24- 30ghz宽带Doherty PA,在0.13 μm SiGe下,最大Pavg为15.37 dBm, PAEavg为14.6%,适用于400mhz BW 5G NR
本文提出了一种采用英飞凌$0.13 \mu \math {m}$ SiGe BiCMOS技术的24-30 GHz宽带Doherty P a (DP a)。提出并实现了一种基于宽带变压器的阻抗逆变器匹配网络(IIMN),以在较小的体积内同时实现宽带宽和高效率。此外,层叠的PA单元胞拓扑结构被应用于功率附加效率(PAE)的提高。在24-30 GHz (5G N257 N258频段)的5G NR FR2 64-QAM调制测量中,在5% EVM约束下,该DPA在100MHz BW下实现了17.24 dBm的最大Pavg和16.8%的PAE。在200 MHz BW下,最大Pavg为16.94 dBm, $\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}}$为16.6%。400 MHz时,最大Pavg为15.37 dBm, $\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}}$为14.6%。在24 - 30ghz (N257 - N258)频段,该放大器可提供12 dBm以上的平均输出功率(P avg),其平均PAE $(\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}})$ (\text{PAE}_{\mathrm{a}\mathrm{v}\mathrm{g}})$在全频段均保持在10%以上,均在临界条件$ 85 ^{\circ}\mathrm{C}$下报告。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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