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Using Ge pre-amorphisation and spike annealing for optimizing shallow junctions in deep-submicron CMOS

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194798
V. Meyssen, P. Stolk, J. van Zijl, J. van Berkum, W.G. van der Wijgert
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利用锗预非晶化和尖峰退火优化深亚微米CMOS的浅结
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30th European Solid-State Device Research Conference
30th European Solid-State Device Research Conference
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