Design and analysis of a high-performance cascode bipolar low noise amplifier with shunt feedback capacitor

Byoungjoong Kang, Sung-Gi Yang, J. Yu, Wooseung Choo, Byeong-ha Park
{"title":"Design and analysis of a high-performance cascode bipolar low noise amplifier with shunt feedback capacitor","authors":"Byoungjoong Kang, Sung-Gi Yang, J. Yu, Wooseung Choo, Byeong-ha Park","doi":"10.1109/RFIC.2008.4561512","DOIUrl":null,"url":null,"abstract":"In this paper, a cascode bipolar low noise amplifier (LNA) employing a shunt feedback capacitor is presented, for which the linearity and the noise figure (NF) can be optimized by reducing the transistor size and degeneration inductance. We also show that the second-order interaction, which affects the third-order nonlinearity, becomes insensitive to low-frequency input termination as the DC current increases. Finally, the method of removing the low-frequency trap is presented. The fabricated LNA in 0.35-mum SiGe BiCMOS process showed NF of 0.9 dB with 16-dB power gain and IIP3 of +11 dBm with current consumption of 10 mA from 2.8-V power supply at 900 MHz. The demonstrated LNA satisfies stringent sensitivity and linearity requirement of code-division multiple-access (CDMA) applications quite well.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561512","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

In this paper, a cascode bipolar low noise amplifier (LNA) employing a shunt feedback capacitor is presented, for which the linearity and the noise figure (NF) can be optimized by reducing the transistor size and degeneration inductance. We also show that the second-order interaction, which affects the third-order nonlinearity, becomes insensitive to low-frequency input termination as the DC current increases. Finally, the method of removing the low-frequency trap is presented. The fabricated LNA in 0.35-mum SiGe BiCMOS process showed NF of 0.9 dB with 16-dB power gain and IIP3 of +11 dBm with current consumption of 10 mA from 2.8-V power supply at 900 MHz. The demonstrated LNA satisfies stringent sensitivity and linearity requirement of code-division multiple-access (CDMA) applications quite well.
带并联反馈电容的高性能级联双极低噪声放大器的设计与分析
本文提出了一种采用并联反馈电容的级联双极低噪声放大器,通过减小晶体管尺寸和退化电感来优化线性度和噪声系数。我们还表明,随着直流电流的增加,影响三阶非线性的二阶相互作用对低频输入端接变得不敏感。最后,给出了消除低频陷波的方法。在0.35 μ m SiGe BiCMOS工艺下制备的LNA, NF为0.9 dB,功率增益为16 dB, IIP3为+11 dBm, 2.8 v电源900 MHz时电流消耗为10 mA。所演示的LNA能很好地满足码分多址(CDMA)应用对灵敏度和线性度的严格要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信