A noise and RTN-removal smart method for parameters extraction of CMOS aging compact models

Abstract

This work presents a new method to statistically characterize the emission times and threshold voltage shifts (ΔVth) related to oxide defects in nanometer CMOS transistors during aging tests. The method identifies the Vth drops associated to oxide trap emissions during BTI and HCI aging recovery traces while removing RTN and background noise contributions, to avoid artifacts during data analysis.