Low Specific Contact Resistivity Measurements using a New Test Structure and its Reduction to 10−9 ohm-cm2 in p-type SiGe/Metal Contacts using Flash Lamp Annealing

Abstract

Reduction of the contact resistance at source/drain and metal electrodes is one of the key challenges in the fabrication of high performance CMOS devices. In recent years, several studies have addressed the issue of minimizing the specific contact resistivity (ρ c ) [1] – [5] . Quite low values of ρ c in the sub-10 −9 ohm-cm 2 region have been reported for advanced technologies.