10 kV, 123 m/spl Omega/-cm/sup 2/ 4H-SiC power DMOSFETs

Abstract

Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 m/spl Omega//spl middot/cm/sup 2/ is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.