T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata
{"title":"Position Control and Gas Source CVD Growth Technologies of 2D MX2 Materials for Real LSI Applications","authors":"T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata","doi":"10.1109/EDTM.2018.8421437","DOIUrl":null,"url":null,"abstract":"We have demonstrated position controlled CVD growth of metal dichacogenide (WS<inf>2</inf> and SnS<inf>2</inf>) by using patterned Si substrates. It was found that step edges effectively induced crystal nucleation and lateral crystal growth of 2D materials proceeded from there. Gas source CVD system applicable to industrial production has also been developed and WS<inf>2</inf> and SnS<inf>2</inf> synthesis have been confirmed.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM.2018.8421437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have demonstrated position controlled CVD growth of metal dichacogenide (WS2 and SnS2) by using patterned Si substrates. It was found that step edges effectively induced crystal nucleation and lateral crystal growth of 2D materials proceeded from there. Gas source CVD system applicable to industrial production has also been developed and WS2 and SnS2 synthesis have been confirmed.
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