Optical response of Quantum Dot Transistor with front side illumination

Abstract

The theoretical work for the DC performance of Quantum Dot Transistor under Front side illumination is presented. A device structure consist of Quantum Dots in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I–V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been evaluated, plotted and discussed.