Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs

Abstract

We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V/sub As/V/sub Ga/. An alignment of the Jahn-Teller distortions has been found for these complexes.